Gate-tunable room-temperature ferromagnetism in two-dimensional Fe 3GeTe 2. Mechanism of gold-assisted exfoliation of centimeter-sized transition-metal dichalcogenide monolayers. Gold-mediated exfoliation of ultralarge optoelectronically-perfect monolayers. Exfoliation of large-area transition metal chalcogenide single layers. Raman spectral band oscillations in large graphene bubbles. This paper reports an oxygen plasma enhanced exfoliation method, which can produce large-area 2D crystals including graphene and the high-temperature superconductor bismuth strontium calcium copper oxide (Bi-2212). Reliable exfoliation of large-area high-quality flakes of graphene and other two-dimensional materials. Recent progress on two-dimensional materials. Oxygen-activated growth and bandgap tunability of large single-crystal bilayer graphene. Evolution of electronic structure in atomically thin sheets of WS 2 and WSe 2. First demonstration of a transistor from a monolayer semiconductor (MoS 2 ), prepared by mechanical exfoliation from a layered bulk crystal. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. Atomically thin MoS 2: a new direct-gap semiconductor.
Experimental observation of the quantum Hall effect and Berry’s phase in graphene. Interface formation in monolayer graphene-boron nitride heterostructures. Graphene and boron nitride lateral heterostructures for atomically thin circuitry. Moire bands in twisted double-layer graphene. 2D materials and van der Waals heterostructures. The first report of the exfoliation of single-layer graphene using adhesive tape. Electric field effect in atomically thin carbon films. Van der Waals epitaxy - a new epitaxial growth method for a highly lattice-mismatched system. Nucleation of misfit dislocations in strained-layer epitaxy in the Ge xSi 1−x/Si system.
Kinetic pathway in Stranski–Krastanov growth of Ge on Si(001).
Ge xSi 1−x/Si strained-layer superlattice grown by molecular beam epitaxy. Epitaxy Of Semiconductors: Introduction To Physical Principles (Springer, 2013).īean, J. in Springer Handbook Of Electronic And Photonic Materials (eds Safa, K. A high-mobility electron gas at the LaAlO 3/SrTiO 3 heterointerface. Superconducting interfaces between insulating oxides. SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications. Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes. Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Finally, current issues of reproducibility, limitations and opportunities for future breakthroughs in terms of enhanced homogeneity, interfacial purity, feature control and ultimately orders-of-magnitude increased complexity of van der Waals heterostructures are discussed.Ĭhen, S. Examples of the properties of artificial van der Waals structures include optoelectronics and plasmonics, twistronics and unique functionality arising from the generalization of van der Waals assembly from 2D to 3D crystalline components. As important as the fabrication itself is the characterization of the resulting engineered materials, for which a range of analysis techniques covering structure, composition and emerging functionality are highlighted. Successful techniques, advantages and limitations are discussed for both approaches. This Primer provides an overview of state-of-the-art methodologies for producing such van der Waals heterostructures, focusing on the two fundamentally different strategies, top-down deterministic assembly and bottom-up synthesis. The advent of 2D materials has provided unprecedented opportunities for novel heterostructures in the form of van der Waals stacks, laterally stitched 2D layers and more complex layered and 3D architectures. The integration of dissimilar materials into heterostructures has become a powerful tool for engineering interfaces and electronic structure.